131 chopper igbtmod? u-series module 75 amperes / 1200 v olts CM75E3U-24H p o were x, inc., 200 hillis street, y oungw ood, p ennsylv ania 15697-1800 (724) 925-7272 outline drawing and circuit diagram dimensions inches millimeters a 3.70 94.0 b 1.89 48.0 c 1.18 +0.04/-0.02 30.0 +1.0/-0.5 d 3.15 0.01 80.0 0.25 e 0.43 11.0 f 0.16 4.0 g 0.51 13.0 h 0.02 0.5 j 0.53 13.5 k 0.91 23.0 dimensions inches millimeters l 0.84 21.2 m 0.67 17.0 n 0.28 7.0 pm5 m5 q 0.2 6 di a. 6 .5 dia. r 0.02 4.0 s 0.30 7.5 t 0.63 16.0 u 0.98 25.0 description: powerex chopper igbtmod? modules are designed for use in switching applications. each module consists of one igbt transistor having a reverse-connected super- fast recovery free-wheel diode and an anode-collector connected super- fast recovery free-wheel diode. all components and interconnects are isolated from the heat sinking base- plate, offering simplified system assembly and thermal management . features: h low drive power h low v ce(sat) h discrete super-fast recovery fr ee - wheel diode h high frequency operation (15-20khz) h isolated baseplate for easy heat sinking applications: h dc motor control h boost regulator ordering information: example: select the complete module number you desire from the table - i.e. CM75E3U-24H is a 1200v (v ces ), 75 ampere chopper igbtmod? power module. current rating v ces type amperes volts (x 50) cm 75 24 131 q - (2 places) cm p - nuts (3 places) .47 [12mm] deep c2e1 e2 c1 e2 g2 c2e1 e2 c1 e2 g2 h a b c d r k k m n e f j t u t l s g #110 tab
132 CM75E3U-24H chopper igbtmod? u-series module 75 amperes/1200 volts powerex, inc., 200 hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 absolute maximum ratings, t j = 25 c unless otherwise specified ratings symbol CM75E3U-24H units junction temperature t j -40 to 150 c storage temperature t stg -40 to 125 c collector-emitter voltage (g-e short) v ces 1200 volts gate-emitter voltage (c-e short) v ges 20 volts collector current (t c = 25 c) i c 75 amperes peak collector current i cm 150* amperes emitter current** (t c = 25 c) i e 75 amperes peak emitter current** i em 150* amperes maximum collector dissipation (t c = 25 c, t j 150 c) p c 600 watts mounting torque, m5 main terminal C 31 in-lb mounting torque, m6 mounting C 40 in-lb weight C 310 grams isolation voltage (main terminal to baseplate, ac 1 min.) v iso 2500 volts * pulse width and repetition rate should be such that the device junction temperature (t j ) does not exceed t j(max) rating. **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). static electrical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units collector-cutoff current i ces v ce = v ces , v ge = 0v C C 1 ma gate leakage voltage i ges v ge = v ges , v ce = 0v C C 0.5 m a gate-emitter threshold voltage v ge(th) i c = 7.5ma, v ce = 10v 4.5 6 7.5 volts collector-emitter saturation voltage v ce(sat) i c = 75a, v ge = 15v, t j = 25 c C 2.9 3.7 volts i c = 75a, v ge = 15v, t j = 125 c C 2.85 C volts total gate charge q g v cc = 600v, i c = 75a, v ge = 15v C 280 C nc emitter-collector voltage** v ec i e = 75a, v ge = 0v C C 3.2 volts emitter-collector voltage v fm i f = 75a, clamp diode part C C 3.2 volts **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). dynamic electrical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units input capacitance c ies CC11nf output capacitance c oes v ce = 10v, v ge = 0v C C 3.7 nf reverse transfer capacitance c res C C 2.2 nf resistive turn-on delay time t d(on) v cc = 600v, i c = 75a, C C 100 ns load rise time t r v ge1 = v ge2 = 15v, C C 200 ns switch turn-off delay time t d(off) r g = 4.2 v , resistive C C 250 ns times fall time t f load switching operation C C 350 ns diode reverse recovery time** t rr i e = 75a, di e /dt = -150a/ m s C C 300 ns diode reverse recovery charge** q rr i e = 75a, di e /dt = -150a/ m s C 0.41 C m c diode reverse recovery time t rr i f = 75a, clamp diode part C C 300 ns diode reverse recovery charge q rr di f /dt = -150a/ m s C 0.41 C m c **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). 132
133 CM75E3U-24H chopper igbtmod? u-series module 75 amperes/1200 volts powerex, inc., 200 hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 133 collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (typical) 0246810 75 25 0 v ge = 20v 12 11 10 8 t j = 25 o c 50 100 150 125 9 15 gate-emitter voltage, v ge , (volts) collector current, i c , (amperes) transfer characteristics (typical) 048121620 125 100 75 50 25 0 150 v ce = 10v t j = 25 c t j = 125 c collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-emitter saturation voltage characteristics (typical) 5 0 25 50 75 100 125 4 3 2 1 0 150 v ge = 15v t j = 25 c t j = 125 c gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 10 048121620 8 6 4 2 0 t j = 25 c i c = 30a i c = 150a i c = 75a 1.0 1.5 2.0 2.5 3.0 3.5 10 0 10 1 10 2 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) 10 3 emitter current, i e , (amperes) t j = 25 c collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 -1 10 0 10 2 10 2 10 1 10 0 10 -1 v ge = 0v f = 1mhz 10 1 c ies c oes c res thermal and mechanical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case r th(j-c) q per igbt module C C 0.21 c/w thermal resistance, junction to case r th(j-c) d per fwdi module C C 0.47 c/w thermal resistance, junction to case r th(j-c) clamp diode part C C 0.47 c/w contact thermal resistance r th(c-f) per module, thermal grease applied C 0.035 C c/w
134 CM75E3U-24H chopper igbtmod? u-series module 75 amperes/1200 volts powerex, inc., 200 hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 134 time, (s) normalized transient thermal impedance, z th(j-c) transient thermal impedance characteristics (igbt) 10 1 10 -5 10 -4 10 -3 10 0 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 single pulse t c = 25 c per unit base = r th(j-c) = 0.21 c/w z th = r th ?(normalized value) 10 -1 10 -2 10 -3 time, (s) normalized transient thermal impedance, z th(j-c) transient thermal impedance characteristics (fwdi) 10 1 10 -5 10 -4 10 -3 10 0 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 single pulse t c = 25 c per unit base = r th(j-c) = 0.47 c/w z th = r th ?(normalized value) 10 -1 10 -2 10 -3 collector current, i c , (amperes) 10 3 10 0 10 1 10 2 10 2 10 1 10 0 t d(off) t d(on) t r v cc = 600v v ge = 15v r g = 4.2 w t j = 125 c t f switching time, (ns) half-bridge switching characteristics (typical) emitter current, i e , (amperes) reverse recovery time, t rr , (ns) reverse recovery characteristics (typical) 10 3 10 0 10 1 10 2 10 2 10 1 t rr i rr di/dt = -150a/ m sec t j = 25 c 10 2 10 1 10 0 reverse recovery current, i rr , (amperes) gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge, v ge 20 0 100 15 10 5 0 200 400 300 v cc = 600v v cc = 400v i c = 75a
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